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В категории Datasheets: 26 Показано Datasheets: 1-20 |
Страницы: 1 2 » |
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The LM137 series are adjustable 3-terminal negative voltage regulators capable of supplying in excess -1.5A over a -1.2 to -37V output voltage range.They are exceptionally easy to use and require only two external resistors to set the output voltage. Further, both line and load regulation are better than standard fixed regulators. Формат: PDF Размер: 1.52 Mb Скачать: narod.ru
L |
Просмотров: 640 |
Дата: 08.05.2010
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2SC4234 NPN Switching Power Transistor
Формат: PDF Размер: 393 Kb
C |
Просмотров: 513 |
Дата: 07.05.2010
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2SC4231 NPN Power transistor
Формат: PDF Размер: 393 Kb
C |
Просмотров: 747 |
Дата: 07.05.2010
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2SC4020 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor)
Формат: PDF Размер: 22 Kb
C |
Просмотров: 449 |
Дата: 07.05.2010
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2SC3979, 2SC3979A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching
Формат: PDF Размер: 62 Kb
C |
Просмотров: 476 |
Дата: 07.05.2010
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2SC3866 NPN tansistor
Формат: PDF Размер: 163 Kb
C |
Просмотров: 512 |
Дата: 07.05.2010
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2SC3751 NPN transistor
Формат: PDF Размер: 94 Kb
C |
Просмотров: 480 |
Дата: 07.05.2010
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2SC3457 800V/3A Switching Regulator Applications
Формат: PDF Размер: 120 Kb
C |
Просмотров: 472 |
Дата: 07.05.2010
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2SC3150 NPN Power transistor
Формат: PDF Размер: 128 Kb
C |
Просмотров: 449 |
Дата: 07.05.2010
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The 2N3055 is a silicon epitaxial-base NPN transistor in Jedec TO-3 metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers.
Формат: PDF Размер: 40 Kb
2 |
Просмотров: 386 |
Дата: 07.05.2010
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The ULN2001A, ULN2002A, ULN2003 and ULN2004A are high voltage, high current darlington arrays each containing seven open collector darlington pairs with common emitters. Each channel rated at 500mA and can withstand peak currents of 600mA. Suppression diodes are included for inductive load driving and the inputs are pinned opposite the outputs to simplify board layout.
Формат: PDF Размер: 326 Kb
U |
Просмотров: 470 |
Дата: 06.05.2010
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UC2842AD1; UC3842AD1; UC2843AD1; UC3843AD1; UC2844AD1; UC3844AD1; UC2845AD1; UC3845AD1 SO-8 UC2842AN; UC3842AN; UC2843AN; UC3843AN; UC2844AN; UC3844AN; UC2845AN; UC3845AN -DIP-8 The UC384xA family of control ICs provides the necessary features to implement off-line or DC to DC fixed frequency current mode control schemes with a minimal external parts count.
Формат: PDF Размер: 171 Kb
U |
Просмотров: 547 |
Дата: 06.05.2010
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TT2194 NPN Triple Diffused Planar Silicon Transistor
Формат: PDF Размер: 44 Kb
T |
Просмотров: 1270 |
Дата: 06.05.2010
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TOP221-227 Three-terminal Off-line PWM Switch. The second generation TOPSwitch-II family is more cost effective and provides several enhancements over the first generation TOPSwitch family. The TOPSwitch-II family extends the power range from 100W to 150W for 100/115/230 VAC input and from 50W to 90W for 85-265 VAC universal input.
Формат: PDF Размер: 474 Kb
T |
Просмотров: 489 |
Дата: 06.05.2010
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SBL2030CT - SBL2060CT 20A SCHOTTKY BARRIER RECTIFIER
Формат: PDF Размер: 67 Kb
S |
Просмотров: 719 |
Дата: 04.05.2010
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2SK2545 N-channel MOS
Формат: PDF Размер: 272 Kb
K |
Просмотров: 475 |
Дата: 03.05.2010
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KA2915 IC for TV Large integration
Формат: PDF Размер: 250 Kb
K |
Просмотров: 519 |
Дата: 03.05.2010
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The AT29C040A is a 5-volt only in-system Flash Programmable and Erasable Rea Only Memory (PEROM). Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS EEPROM technology, the device offers access times up to 90 ns, and a low 220 mW power dissipatio When the device is deselected, the CMOS standby current is less than 100 µA. The device endurance is such that any sector can typically be written to in excess 10,000 times. The programming algorithm is compatible with other devices in Atmel 5-volt only Flash family.
Формат: PDF Размер: 346 Kb
A |
Просмотров: 437 |
Дата: 30.04.2010
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The AT29C010A is a 5-volt-only in-system Flash programmable and erasable read only memory (PEROM). Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 70 ns with power dissipation of just 275 mW over the commercial temperature range. When the device is deselected, the CMOS standby current is less than 100 µA. The device endurance is such that any sector can typically be written to in excess of 10,000 times.
Формат: PDF Размер: 426 Kb
A |
Просмотров: 480 |
Дата: 30.04.2010
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The FSD200 and FSD210 are integrated Pulse Width Modulators (PWM) and Sense FETs specially designed for high performance off-line Switch Mode Power Supplies (SMPS) with minimal external components. Формат: PDF Размер: 387 Kb
F |
Просмотров: 483 |
Дата: 26.02.2010
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