INSULATED GATE BIPOLAR TRANSISTOR
• UltraFast switching speed optimized for operating frequencies 8 to 40kHz in hard switching,
200kHz in resonant mode soft switching
• Generation 4 IGBT design provides tighter parameter distribution and higher efficiency
(minimum switching and conduction losses) than prior generations
• Industry-benchmark Super-247 package with higher power handling capability compared to
same footprint TO-247
• Creepage distance increased to 5.35mm Формат: PDF
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