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В категории Datasheets: 22
Показано Datasheets: 1-20 |
Страницы: 1 2 » |
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Просмотрам
IRFR320B,IRFU320B 400V N-Channel Power MOSFET Формат: PDF
Размер: 678 Kb
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Просмотров: 377 |
Дата: 26.02.2010
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This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. Формат: PDF
Размер: 53 Kb
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Просмотров: 351 |
Дата: 26.02.2010
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IRF140-143,IRF540-543 N-Channel Power MOSFETs Формат: PDF
Размер: 146 Kb
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Просмотров: 303 |
Дата: 26.02.2010
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IRF520, IRF520FI N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS Формат: PDF
Размер: 181 Kb
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Просмотров: 350 |
Дата: 26.02.2010
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IRFZ34 HEXFET Power MOSFET Формат: PDF
Размер: 171 Kb
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Просмотров: 356 |
Дата: 26.02.2010
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IRFZ44N HEXFET Power MOSFET Формат: PDF
Размер: 104 Kb
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Просмотров: 376 |
Дата: 26.02.2010
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IRF540 LOW GATE CHARGE STripFET POWER MOSFET N-CHANNEL 100V - 0.055 Ω - 22A TO-220 Формат: PDF
Размер: 296 Kb
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Просмотров: 371 |
Дата: 26.02.2010
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IRF-540 HEXFET Power MOSFET Формат: PDF
Размер: 177 Kb
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Просмотров: 368 |
Дата: 26.02.2010
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IRF540, IRF540S N-channel TrenchMOS transistor Формат: PDF
Размер: 86 Kb
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Просмотров: 369 |
Дата: 26.02.2010
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IRFZ46N HEXFET Power MOSFET Формат: PDF
Размер: 92 Kb
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Просмотров: 352 |
Дата: 26.02.2010
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Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications Формат: PDF
Размер: 134 Kb
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Просмотров: 389 |
Дата: 26.02.2010
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INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE • Hole-less clip/pressure mount package compatible with TO-247 and TO-264, with reinforced pins • High short circuit rating IGBTs, optimized for motorcontrol • Minimum switching losses combined with low conduction losses • Tightest parameter distribution • IGBT co-packaged with ultrafast soft recovery antiparallel diode • Creepage distance increased to 5.35mm Формат: PDF
Размер: 200 Kb
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Просмотров: 370 |
Дата: 26.02.2010
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IRG4PC50FD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard TO-247AC package Формат: PDF
Размер: 211 Kb
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Просмотров: 338 |
Дата: 26.02.2010
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INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard TO-247AC package Формат: PDF
Размер: 213 Kb
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Просмотров: 369 |
Дата: 26.02.2010
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INSULATED GATE BIPOLAR TRANSISTOR • UltraFast switching speed optimized for operating frequencies 8 to 40kHz in hard switching, 200kHz in resonant mode soft switching • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency (minimum switching and conduction losses) than prior generations • Industry-benchmark Super-247 package with higher power handling capability compared to same footprint TO-247 • Creepage distance increased to 5.35mm Формат: PDF
Размер: 271 Kb
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Просмотров: 386 |
Дата: 26.02.2010
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The IRU3037 controller IC is designed to provide a low cost synchronous Buck regulator for on-board DC to DC converter applications. With the migration of today’s ASIC products requiring low supply voltages such as 1.8V and lower, together with currents in excess of 3A, traditional linear regulators are simply too lossy to be used when input supply is 5V or even in some cases with 3.3V input supply.
Формат: PDF
Размер: 284 Kb
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Просмотров: 506 |
Дата: 26.02.2010
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IRFD014 HEXFET Power MOSFET Формат: PDF
Размер: 171 Kb
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Просмотров: 364 |
Дата: 26.02.2010
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IRFI720G HEXFET Power MOSFET Формат: PDF
Размер: 170 Kb
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Просмотров: 357 |
Дата: 26.02.2010
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The ICL232 is a dual RS-232 transmitter/receiver interface circuit that meets all ElA RS-232C and V.28 specifications. It requires a single+5V power supply, and features two onboard charge pump voltage converter swhich generate +10V and -10V supplies from the 5V supply. Формат: PDF
Размер: 139 Kb
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Просмотров: 362 |
Дата: 26.02.2010
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IRL2505S,L HEXFET Power MOSFET Advanced Process Technology Surface Mount (IRL2505S) Low-profile through-hole (IRL2505L) 175°C Operating Temperature Fast Switching Fully Avalanche Rated Logic-Level Gate Drive
Формат: PDF
Размер: 178 Kb
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Просмотров: 444 |
Дата: 26.02.2010
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